Allows the user to explore the impact of parameter choices on the I-V and C-V characteristics for a surface-potential-based MOSFET model. To open this example, in the MATLAB® Command Window, type: ee_mosfet_characteristics.

Allows the user to explore the impact of parameter choices on the I-V and C-V characteristics for a surface-potential-based p-channel LDMOS field-effect transistor model. To open this example, in the MATLAB® Command Window, type: ee_p_ldmos_characteristics.

Allows the user to explore the impact of parameter choices on the I-V and C-V characteristics for a surface-potential-based thermal MOSFET model. To open this example, in the MATLAB® Command Window, type: ee_thermal_mosfet_characteristics.

The generation of I-V and C-V characteristics for an NMOS transistor. Define the bias conditions for the gate-source and drain- source voltage sweeps and the types of plots to be generated by double- clicking the Define Sweep Parameters block. Then click on the "Generate plots" hyperlink in the model . The output capacitance, C_oss, is only shown for sweeps of the drain-source voltage. Note that the C-V characteristics can take several minutes each to generate.

Generation of the Ic versus Vce curve for an insulated gate bipolar transistor. Define the vector of gate-emitter voltages and minimum and maximum collector-emitter voltages by double-clicking the block labeled 'Define Conditions (Vge and Vce)'. Click on the hyperlink 'plot curves' in the model to run the simulations plot the simulation results.

Generation of the Ic versus Vce curve for an IGBT at two different temperatures. To generate the plot, click on the hyperlink in the model labeled 'Plot IGBT curves'.

How the dynamic characteristics of an IGBT depend on its parameters. A prerequisite to matching dynamic characteristics to datasheet values or measured data is to set the parameters defining the static I-V curve. For this, see the 'IGBT Characteristics' example, ee_igbt. With static parameters correctly set, the dynamic parameters can then be set as follows:

Test harness can be used to validate the 'Simplified I-V characteristics and event-based timing' variant of the Simscape™ Electrical™ N-Channel IGBT. This variant only requires I-V data corresponding to the on-state gate voltage, and models turn-on rise time and turn-off fall time by making collector-emitter voltage a linear function of simulation time. Advantages of this approach are faster simulation and easier parameterization.

Use Simscape™ Electrical™ detailed switching device models to create tabulated switching loss data. This tabulated data can then be used with the piecewise linear switching device component models to predict total losses in system models configured for fast and/or fixed-step simulation.

Generation of the characteristic curves for an N-channel MOSFET. Define the vector of gate voltages and minimum and maximum drain-source voltages by double clicking on the block labeled 'Define Conditions (Vg and Vds)'. Then click on hyperlink 'plot results' in the model.

A comparison of nonlinear inductor behavior for different parameterizations. Starting with fundamental parameter values, the parameters for linear and nonlinear representations are derived. These parameters are then used in a Simscape™ model and the simulation outputs compared.

How modifying the equation coefficients of the Jiles-Atherton magnetic hysteresis equations affects the resulting B-H curve. The simulation parameters are configured to run four complete AC cycles with initial field strength (H) and magnetic flux density (B) both set to zero.

Calculation and confirmation of a nonlinear transformer core magnetization characteristic. Starting with fundamental parameter values, the core characteristic is derived. This is then used in a Simscape™ model of an example test circuit which can be used to plot the core magnetization characteristic on an oscilloscope. Model outputs are then compared to the known values.

Generation of the Ic versus Vce curve for an NPN bipolar transistor. Define the vector of base currents and minimum and maximum collector-emitter voltages by double clicking on the block labeled 'Define Conditions (Ib and Vce)'. Run the tests and generate plots of the curves by clicking in the model on hyperlink 'plot curves'.

Generation of the Ic versus Vce curve for a PNP bipolar transistor. Define the vector of base currents and minimum and maximum collector-emitter voltages by double clicking on the block labeled 'Define Conditions (Ib and Vce)'. Run the tests and generate plots of the curves by clicking in the model on hyperlink 'plot curves'.

Generation of the current versus voltage curve for a Schottky barrier diode. Define the vector of temperatures for which to plot the characteristics by double clicking on the block labeled 'Define Temperatures for Tests'. Run the tests and plot the I-V curves by clicking in the model on the hyperlink 'plot curves'.

Validation of the static behavior of the Thyristor block against its mask values. Mask values are closely related to datasheet values, and the thyristor block uses these values to calculate the coefficients of the equations used to model it.

Validation of the dynamic behavior of the Thyristor block against its mask values. Mask values are closely related to datasheet values, and the Thyristor block uses these values to calculate the coefficients of the equations used to model it. Double-click on each of the test subsystems for further information on the tests.